P-Channel Transistor. PA406EM Datasheet

PA406EM Transistor. Datasheet pdf. Equivalent

Part PA406EM
Description P-Channel Transistor
Feature NIKO-SEM P-Channel Enhancement Mode PA406EM Mode Field Effect Transistor SOT-23 Halogen-Free & .
Manufacture NIKO-SEM
Datasheet
Download PA406EM Datasheet

NIKO-SEM P-Channel Enhancement Mode PA406EM Mode Field Ef PA406EM Datasheet
PA406EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PA406EM Datasheet
Recommendation Recommendation Datasheet PA406EM Datasheet





PA406EM
NIKO-SEM
P-Channel Enhancement Mode
PA406EM
Mode Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60 140mΩ
ID
-2A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
1 :GATE
2 :DRAIN
3 :SOURCE
LIMITS
-60
±20
-2
-1.5
-7
0.8
0.5
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
RθJA
150 °C / W
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
STATIC
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V, TJ = 55°C
VDS = -5V, VGS = -10V
VGS = -10V, ID = -1.5A
VGS = -4.5V, ID = -1.5A
LIMITS
UNIT
MIN TYP MAX
-60
-1 -1.8
-3
V
±100 nA
-1
µA
-10
-7 A
93 140
mΩ
118 210
REV 0.9
1 Dec-26-2011



PA406EM
NIKO-SEM
P-Channel Enhancement Mode
PA406EM
Mode Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = -5V, ID = -1.5A
DYNAMIC
7
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = -25V, f = 1MHz
682
54
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -30V, VGS = -10V,
ID = -1.5A
VDS = -30V,
ID -1.5A, VGS = -10V, RGS = 6Ω
47
16
2.2
4.6
17
18
52
19
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -1.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = -1.5A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
21
18
-2
-1
S
pF
nC
nS
A
V
nS
nC
REV 0.9
2 Dec-26-2011





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