N-Channel MOSFET. PF610BC Datasheet

PF610BC MOSFET. Datasheet pdf. Equivalent

Part PF610BC
Description N-Channel MOSFET
Feature PF610BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V.
Manufacture UNIKC
Datasheet
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PF610BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PF610BC Datasheet
Recommendation Recommendation Datasheet PF610BC Datasheet





PF610BC
PF610BC
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
0.7Ω @VGS = 10V
ID
1.1A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
1.1
0.9
5
Avalanche Current
IAS 3.8
Avalanche Energy
L =1mH EAS 7.2
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.9
1.2
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
65
12
UNITS
°C / W
Ver 1.0
1 2013-11-6



PF610BC
PF610BC
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
100
V
VDS = VGS, ID = 250mA
1 1.8 3
VDS = 0V, VGS = ±20V
±100 nA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 70 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V , ID = 0.5A
VGS = 10V , ID = 0.9A
0.6 0.9
0.5 0.7
Ω
Forward Transconductance1
gfs
VDS = 5V, ID = 0.9A
1.7 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,
VGS = 10V, ID = 0.9A
VDS = 50V,
ID @ 0.9A, VGS = 10V, RGEN = 6Ω
244
63
24
1.5
7
1
3
25
33
47
25
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.1 A
Forward Voltage1
VSD IF = 0.9A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF=2A,dl/dt = 100A / μS
34 nS
37 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
Ver 1.0
2 2013-11-6





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