PA110BC

PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 4 3.5 15 Avalanche Current IAS 4.8 Avalanche Energy L = 0.1mH EAS 11.5 Power Dissipation3 TA = 25 °C TA = 100 °C PD 3.9 2.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 32 63 Junction-to-Case RqJC 20 1Pulse width limited by maximum junction temperature. 2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RqJA t ≦10s value. ...