P-Channel MOSFET. PA406EM Datasheet

PA406EM MOSFET. Datasheet pdf. Equivalent

Part PA406EM
Description P-Channel MOSFET
Feature PA406EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 140mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
Download PA406EM Datasheet

NIKO-SEM P-Channel Enhancement Mode PA406EM Mode Field Ef PA406EM Datasheet
PA406EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PA406EM Datasheet
Recommendation Recommendation Datasheet PA406EM Datasheet





PA406EM
PA406EM
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
140mΩ @VGS = -10V
ID
-2A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-2
-1.5
-7
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.8
0.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
150
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz Copper,in a still air
environment with TA=25°C.The value in any given application depends on the user's specific board design.
UNITS
°C / W
Rev 1.0
1 2015/6/18



PA406EM
PA406EM
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-60
-1 -1.8 -3
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V , TJ = 55 °C
VDS = -5V, VGS = -10V
-7
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -10V, ID = -1.5A
VGS = -4.5V, ID = -1.5A
VDS = -5V, ID = -1.5A
93 140
118 210
7
DYNAMIC
Input Capacitance
Ciss
682
Output Capacitance
Coss
VGS = 0V, VDS = -25V, f = 1MHz
54
Reverse Transfer Capacitance
Crss
47
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = -30V, VGS = -10V,
ID = -1.5A
Qgd
16
2.2
4.6
Turn-On Delay Time2
td(on)
17
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -30V
ID @ -1.5A, VGS = -10V, RGS = 6Ω
18
52
Fall Time2
tf
19
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TA = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -1.5A, VGS = 0V
-2
-1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -1.5A, dlF/dt=100A/mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
21
18
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Rev 1.0
2 2015/6/18





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