PA406EM

PA406EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 140mΩ @VGS = -10V ID -2A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -2 -1.5 -7 Power Dissipation TA = 25 °C TA = 70 °C PD 0.8 0.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 150 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz Copper,in a still air environment with TA=25°C.The value in any given application depends on the user's specific board design. UNITS °C / W Rev 1.0 1 2015/6/18 PA406EM P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTE...