N-Channel MOSFET. PZ2N7002M Datasheet

PZ2N7002M MOSFET. Datasheet pdf. Equivalent

Part PZ2N7002M
Description N-Channel MOSFET
Feature PZ2N7002M N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 2Ω @VGS = 10V .
Manufacture UNIKC
Datasheet
Download PZ2N7002M Datasheet

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PZ2N7002M
PZ2N7002M
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 2Ω @VGS = 10V
ID
300mA
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
300
190
1
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
0.35
0.14
Operating Junction & Storage Temperature Range
TJ, TSTG
-40 to 150
UNITS
V
mA
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
350 °C / W
REV 1.2 1 2015/5/6



PZ2N7002M
PZ2N7002M
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 100mA
VDS = VGS, ID = 100mA
VDS = 0V, VGS = ±16V
60
1.0 1.8 2.5
±30
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
1
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 3.5V, ID = 10mA
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 200mA
VDS = 20V, ID = 200mA
2.1 5
1.7 3
1.6 2
0.18
DYNAMIC
Input Capacitance
Ciss
36
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
10
Reverse Transfer Capacitance
Crss
6
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS,VGS = 10V,
ID= 200mA
Qgd
1.6
0.2
1
Turn-On Delay Time2
Turn-Off Delay Time2
td(on)
td(off)
VDD = 30V
ID = 200mA, VGS = 10V, RG = 10Ω
30
125
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
Forward Voltage1
IS
VSD
IF = 200mA, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
300
1.2
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNITS
V
mA
mA
A
Ω
S
pF
nC
nS
mA
V
REV 1.2 2 2015/5/6





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