N-Channel MOSFET. P2B60AMA Datasheet

P2B60AMA MOSFET. Datasheet pdf. Equivalent

Part P2B60AMA
Description N-Channel MOSFET
Feature P2B60AMA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 200Ω @VGS = 10.
Manufacture UNIKC
Datasheet
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P2B60AMA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2B60AMA Datasheet
Recommendation Recommendation Datasheet P2B60AMA Datasheet





P2B60AMA
P2B60AMA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
200Ω @VGS = 10V
ID
40mA
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
40
31
120
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.7
0.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
mA
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
178 °C / W
REV 1.0
1 2015/4/29



P2B60AMA
P2B60AMA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
600
2 3.4 4
±100
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V , TJ = 55 °C
VGS = 10V, ID = 16mA
VDS = 10V, ID = 16mA
1
10
110 200
0.024
DYNAMIC
Input Capacitance
Ciss
16.6
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
8.5
Reverse Transfer Capacitance
Crss
3.4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 480V,VGS = 10V,
ID= 16mA
4.3
0.5
3.2
Turn-On Delay Time2
td(on)
19
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V
ID @ 16mA, VGEN = 10V, RG = 6Ω
15
21
Fall Time2
tf
170
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 16mA, VGS = 0V
38
1.2
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = 16mA, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
160
14
2Independent of operating temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
mA
V
nS
nC
REV 1.0
2 2015/4/29





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