N-Channel MOSFET. P2202CM Datasheet

P2202CM MOSFET. Datasheet pdf. Equivalent

Part P2202CM
Description N-Channel MOSFET
Feature P2202CM N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 24mΩ @VGS = 4.5V .
Manufacture UNIKC
Datasheet
Download P2202CM Datasheet

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P2202CM
P2202CM
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 24mΩ @VGS = 4.5V
ID
6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
6
5
25
Avalanche Current
IAS 21
Avalanche Energy
L=0.1mH
EAS
22
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1
0.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
130 °C / W
Ver 1.0
1 2012/6/5



P2202CM
P2202CM
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
Drain-Source On-State
Resistance1
RDS(ON)
Forward Transconductance1
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 70 °C
VDS = 10V, VGS = 4.5V
VGS = 1.8V, ID = 4A
VGS = 2.5V, ID = 5A
VGS = 4.5V, ID = 6A
VDS = 5V, ID = 6A
20
0.5 0.8 1
±100
1
10
30
29 50
21 32
18 24
9
DYNAMIC
Input Capacitance
Ciss
1030
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
176
Reverse Transfer Capacitance
Crss
126
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 4.5V,
ID = 6A
Qgd
13.2
2
4
Turn-On Delay Time2
td(on)
7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 10V
ID @ 6A, VGS = 4.5V, RG = 6Ω
13
52
Fall Time2
tf
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dIF/dt=100A/mS
14.1
4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.4
1
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/6/5





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