N-Channel MOSFET
P2202CM
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 24mΩ @VGS = 4.5V
ID 6A
SOT-23
ABSO...
Description
P2202CM
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 24mΩ @VGS = 4.5V
ID 6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
6 5 25
Avalanche Current
IAS 21
Avalanche Energy
L=0.1mH
EAS
22
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1 0.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 130 °C / W
Ver 1.0
1 2012/6/5
P2202CM
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS...
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