P3203CMG

P3203CMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 32mΩ @VGS = 4.5V ID 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current2 TA = 25 °C TA = 70 °C ID 6 5 Pulsed Drain Current1,2 IDM 30 Power Dissipation TA = 25 °C TA = 70 °C PD 1.25 0.8 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient3 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. SYMBOL RqJA TYPICAL MAXIMUM UNITS 100 °C / W REV 1.1 1 2014/7/28 P3203CMG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bod...