P5103EMG

P5103EMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -10V ID -3.8A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.8 -3 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.7 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Steady State RqJA 117 Junction-to-Lead Steady State RqJC 60 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W Rev 1.1 1 2015/7/8 P5103EMG P-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHAR...