N-Channel MOSFET. P7503BMG Datasheet

P7503BMG MOSFET. Datasheet pdf. Equivalent

Part P7503BMG
Description N-Channel MOSFET
Feature P7503BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 75mΩ @VGS = 4.5V.
Manufacture UNIKC
Datasheet
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P7503BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P7503BMG Datasheet
Recommendation Recommendation Datasheet P7503BMG Datasheet





P7503BMG
P7503BMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 75mΩ @VGS = 4.5V
ID
2.5A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
2.5
1.6
10
Avalanche Current
IAS 12
Avalanche Energy
L = 0.1mH
EAS
7
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.75
0.3
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
166 °C / W
Ver 1.0
1 2012/4/12



P7503BMG
P7503BMG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
30
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
0.8 1.7 2.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
10
On-State Drain Current1
ID(ON)
VDS = 10V, VGS = 10V
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 1.5A
VGS = 10V, ID = 3A
72 115
50 75
Forward Transconductance1
gfs
VDS = 15V, ID = 3A
16
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
217
68
Reverse Transfer Capacitance
Crss
46
Total Gate Charge2
Qg(4.5V)
Qg(10V)
3
6.2
Gate-Source Charge2
Qgs(4.5V)
Qgs(10V)
VDS = 0.5V(BR)DSS, ID = 3A
0.7
0.7
Gate-Drain Charge2
Qgd(4.5V)
Qgd(10V)
1.5
2.1
Turn-On Delay Time2
td(on)
6
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V, RL = 1Ω
ID @ 3A, VGS = 10V, RGS = 2.5Ω
6
20
Fall Time2
tf
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 ° C )
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2.3
1.5
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
Ver 1.0
2 2012/4/12





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