N-Channel MOSFET. PM506BA Datasheet

PM506BA MOSFET. Datasheet pdf. Equivalent

Part PM506BA
Description N-Channel MOSFET
Feature PM506BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 60mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PM506BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PM506BA Datasheet
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PM506BA
PM506BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 60mΩ @VGS = 10V
ID
3.5A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3.5
2.8
20
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
1.3
0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
90
160
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.1
1 2015/10/13



PM506BA
PM506BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
0.8 1.5 2.5
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 1.5A
VDS = 5V, ID = 3A
44 60
68 100
6S
DYNAMIC
Input Capacitance
Ciss
206
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
36 pF
Reverse Transfer Capacitance
Crss
25
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 15V,ID= 3A
5
2.9
nC
0.8
Gate-Drain Charge2
Qgd
1.7
Turn-On Delay Time2
td(on)
6
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V
ID @ 3A, VGS= 10V, RGEN = 6Ω
13
nS
37
Fall Time2
tf
9
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current2
IS
0.8 A
Forward Voltage1
VSD IF = 3A, VGS = 0V
1.5 V
Reverse Recovery Time
trr IF = 3A, dlF/dt = 100A /ms
Reverse Recovery Change
Qrr
VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
11.5 nS
3.5 nC
2Independent of operating temperature.
REV 1.1
2 2015/10/13





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