PM506BA

PM506BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 60mΩ @VGS = 10V ID 3.5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 3.5 2.8 20 Power Dissipation3 TA = 25 °C TA = 70 °C PD 1.3 0.8 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 90 160 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air environment with TA =25°C. 3The Power dissipation is based on RqJA t ≦10s value. UNITS °C / W REV 1.1 1 2015/10/13 PM506BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACT...