N-Channel MOSFET. PM516BA Datasheet

PM516BA MOSFET. Datasheet pdf. Equivalent

Part PM516BA
Description N-Channel MOSFET
Feature PM516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 30mΩ @VGS = 4.5V .
Manufacture UNIKC
Datasheet
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PM516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PM516BA Datasheet
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PM516BA
PM516BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 30mΩ @VGS = 4.5V
ID
5A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
5
3.5
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.9
0.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
135
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.2 1 2015/7/2



PM516BA
PM516BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
20
0.5 0.6 1
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 55 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 1.8V, ID = 2A
VGS = 2.5V, ID = 4.5A
VGS = 4.5V, ID = 5A
VDS = 5V, ID = 5A
38 55
30 38
26 30
20
DYNAMIC
Input Capacitance
Ciss
582
Output Capacitance
Coss
VGS = 0V, VDS = 10V, f = 1MHz
71
Reverse Transfer Capacitance
Crss
61
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 10V,VGS = 4.5V,
ID= 5A
9.1
1.1
2.8
Turn-On Delay Time2
td(on)
16
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 10V
ID @ 5A, VGEN= 4.5V, RG = 6Ω
26
47
Fall Time2
tf
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
5
1
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = 5A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
9
3
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
nC
nS
A
V
nS
nC
REV 1.2 2 2015/7/2





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