P6403FMG

P6403FMG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 64mΩ @VGS = -4.5V ID -3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3 -2.3 -20 Avalanche Current IAS -20 Avalanche Energy L = 0.1 mH EAS 20 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.6 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 130 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.2 1 2014-3-10 P6403FMG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = ...