P-Channel MOSFET. P7004EM Datasheet

P7004EM MOSFET. Datasheet pdf. Equivalent

Part P7004EM
Description P-Channel MOSFET
Feature P7004EM P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 70m.
Manufacture UNIKC
Datasheet
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P7004EM P-Channel Logic Level Enhancement Mode MOSFET PRODU P7004EM Datasheet
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P7004EM
P7004EM
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
70mΩ @VGS = -10V
ID
-2.5A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-2.5
-2
-20
Avalanche Current
IAS -19
Avalanche Energy
L = 0.1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.75
0.48
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Steady state
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
166 °C / W
Rev 1.1
1 2015/9/17



P7004EM
P7004EM
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-40
-1.5 -2 -2.5
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
-1
mA
-10
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V
-20
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -10V, ID = -2.5A
45 70
Forward Transconductance1
gfs
VDS = -10V, ID = -2.5A
6S
DYNAMIC
Input Capacitance
Ciss
650
Output Capacitance
Coss
VGS = 0V, VDS = -20V, f = 1MHz
137 pF
Reverse Transfer Capacitance
Crss
92
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -2.5A
12
2
4
Turn-On Delay Time2
td(on)
7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -20V
ID @ -1A, VGEN = -10V, RGS = 6Ω
10
30
Fall Time2
tf
22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -2.5A, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
-0.75
-1
nC
nS
A
V
2Independent of operating temperature.
Rev 1.1
2 2015/9/17





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