P-Channel MOSFET. PA102FMG Datasheet

PA102FMG MOSFET. Datasheet pdf. Equivalent

Part PA102FMG
Description P-Channel MOSFET
Feature PA102FMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 11.
Manufacture UNIKC
Datasheet
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PA102FMG P-Channel Logic Level Enhancement Mode MOSFET PROD PA102FMG Datasheet
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PA102FMG
PA102FMG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
118mΩ @VGS = -4.5V
ID
-3A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3
-2.1
-10
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.38
0.88
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
166 °C / W
REV 1.1
1 2014/7/28



PA102FMG
PA102FMG
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±12V
-20
-0.30 -0.8 -1.2
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -4.5V
-10
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -2.5V, ID = -1A
VGS = -4.5V, ID = -2A
VGS = -10V, ID = -2A
VDS = -5V, ID = -2A
150 215
98 118
72 85
16
DYNAMIC
Input Capacitance
Ciss
430
Output Capacitance
Coss VGS = 0V, VDS = -6V, f = 1MHz
235
Reverse Transfer Capacitance
Crss
95
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = -4.5V,
ID = -2A
Qgd
7.6
3.2
2
Turn-On Delay Time2
td(on)
11
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -10V,ID @ -1A,
VGS = -4.5V, RG = 6Ω
32
38
Fall Time2
tf
32
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -2A, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
10
22
55
68
55
-1.6
-1.2
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
REV 1.1
2 2014/7/28





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