P-Channel MOSFET. PA203EMG Datasheet

PA203EMG MOSFET. Datasheet pdf. Equivalent

Part PA203EMG
Description P-Channel MOSFET
Feature PA203EMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12.
Manufacture UNIKC
Datasheet
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PA203EMG P-Channel Logic Level Enhancement Mode MOSFET PROD PA203EMG Datasheet
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PA203EMG
PA203EMG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
120mΩ @VGS = -10V
ID
-2.6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-2.6
-2.1
-10
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.25
0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
100
80
UNITS
°C / W
REV 1.1
1 2014/7/28



PA203EMG
PA203EMG
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
-30
-1 -1.5
-3
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-2.6
-1
mA
-10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -1.5A
VGS = -10V, ID = -2.6A
VDS = -5V, ID = -2.6A
180 200
100 120
5S
DYNAMIC
Input Capacitance
Ciss
250
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
65 pF
Reverse Transfer Capacitance
Crss
45
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -2.6A
Qgd
5.3
1
1.3
Turn-On Delay Time2
td(on)
13
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V,ID @ -1A,
VGS = -10V, RGS = 6Ω
36
42
Fall Time2
tf
34
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TA = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
-1.25
-1
Ω
nC
nS
A
V
Reverse Recovery Time
trr
25 nS
Reverse Recovery Change
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
15 nC
2Independent of operating temperature.
REV 1.1
2 2014/7/28





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