P-Channel MOSFET. PA504EM Datasheet

PA504EM MOSFET. Datasheet pdf. Equivalent

Part PA504EM
Description P-Channel MOSFET
Feature PA504EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 150mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
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PA504EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PA504EM Datasheet
Recommendation Recommendation Datasheet PA504EM Datasheet





PA504EM
PA504EM
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
150mΩ @VGS = -10V
ID
-1.5A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-1.5
-1.1
-9
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.5
0.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz Copper
MAXIMUM
220
UNITS
°C / W
Ver 1.0
1 2012/6/27



PA504EM
PA504EM
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 55 °C
VDS = -10V, VGS = -4.5V
-40
-1.30 -1.8 -3
±100
-1
-10
-8
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -1.2A
VGS = -10V, ID = -1.5A
VDS = -5V, ID = -1.5A
170 250
120 150
4
DYNAMIC
Input Capacitance
Ciss
235
Output Capacitance
Coss VGS = 0V, VDS = -20V, f = 1MHz
40
Reverse Transfer Capacitance
Crss
29
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -1.5A
Qgd
5.1
1
1.7
Turn-On Delay Time2
td(on)
14
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -20V
ID @ -1.5A, RG = 6Ω
6
30
Fall Time2
tf
13
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -1.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -3A, dlF/dt=100A/mS
13
7
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-0.5
-1.1
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/6/27





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