P-Channel MOSFET. P5102FMA Datasheet

P5102FMA MOSFET. Datasheet pdf. Equivalent

Part P5102FMA
Description P-Channel MOSFET
Feature P5102FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.
Manufacture UNIKC
Datasheet
Download P5102FMA Datasheet

P5102FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P5102FMA Datasheet
Recommendation Recommendation Datasheet P5102FMA Datasheet





P5102FMA
P5102FMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
45mΩ @VGS = -4.5V
ID
-3.5A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.5
-2.8
-21
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.0
0.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
120
60
UNITS
°C / W
REV 1.2
1 2016/5/13



P5102FMA
P5102FMA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±8V
-20
-0.45 -0.6 -0.9
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 70 °C
-1
-10
Drain-Source On-State
Resistance1
On-State Drain Current1
Forward Transconductance1
RDS(ON)
ID(ON)
gfs
VGS = -1.8V, ID = -2A
VGS = -2.5V, ID = -3.5A
VGS = -4.5V, ID = -3.5A
VDS =-5V, VGS = -4.5V
VDS = -5V, ID = -3.5A
60 71
48 55
40 45
-21
17
DYNAMIC
Input Capacitance
Ciss
1180
Output Capacitance
Coss
VGS = 0V, VDS = -10V, f = 1MHz
185
Reverse Transfer Capacitance
Crss
117
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = -10V,VGS =-4.5V,
ID= -3.5A
Qgd
16.7
1.8
4.6
Turn-On Delay Time2
td(on)
20
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -10V
ID @ -3.5A, VGS= -4.5V, RGEN = 3.3Ω
36
45
Fall Time2
tf
62
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -3.5A, VGS = 0V
-3.5
-1.3
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = -3.5A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
30
14
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
REV 1.2
2 2016/5/13





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)