P-Channel MOSFET. P5103EMA Datasheet

P5103EMA MOSFET. Datasheet pdf. Equivalent

Part P5103EMA
Description P-Channel MOSFET
Feature P5103EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
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P5103EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P5103EMA Datasheet
Recommendation Recommendation Datasheet P5103EMA Datasheet





P5103EMA
P5103EMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID
-3.8A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.8
-3
-20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1
0.7
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
117
1Limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014/4/24



P5103EMA
P5103EMA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-30
-1 -1.8 -3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 70 °C
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -3.5A
VGS = -10V, ID = -3.8A
VDS = -5V, ID = -3.8A
65 85
41 51
7
DYNAMIC
Input Capacitance
Ciss
562
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
98
Reverse Transfer Capacitance
Crss
85
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = -15V, ID= -3.8A
13.3
6.9
1.9
Gate-Drain Charge2
Qgd
3.5
Turn-On Delay Time2
td(on)
22
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V
ID @ -3.8A, VGS= -10V, RGEN = 6Ω
23
110
Fall Time2
tf
58
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -3.8A, VGS = 0V
-0.9
-1.1
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = -3.8A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
13.2
6
2Independent of operating temperature.
UNIT
V
nA
mA
S
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014/4/24





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