PM503BA

PM503BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 115mΩ @VGS = -10V ID -2A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -2 -1.5 10 Power Dissipation TA = 25 °C TA = 70 °C PD 0.7 0.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper. MAXIMUM UNITS 160 °C / W REV 1.0 1 2017/1/10 PM503BA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gat...