P-Channel MOSFET. PM557BA Datasheet

PM557BA MOSFET. Datasheet pdf. Equivalent

Part PM557BA
Description P-Channel MOSFET
Feature PM557BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 50mΩ @VGS = -4..
Manufacture UNIKC
Datasheet
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PM557BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PM557BA Datasheet
Recommendation Recommendation Datasheet PM557BA Datasheet





PM557BA
PM557BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
50mΩ @VGS = -4.5V
ID
-3.3A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.3
-2.6
-16
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.9
0.6
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.
MAXIMUM
130
UNITS
°C / W
REV 1.0
1 2015/5/19



PM557BA
PM557BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±12V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
VGS = -2.5V, ID = -1A
VGS = -4.5V, ID = -3.3A
VDS = -5V, ID = -3.3A
-30
-0.7 -0.9 -1.3
V
±100 nA
-1
mA
-10
50 75
40 50
15 S
DYNAMIC
Input Capacitance
Ciss
807
Output Capacitance
Coss
VGS = 0V, VDS = -15V, f = 1MHz
81
Reverse Transfer Capacitance
Crss
61
Total Gate Charge2
Qg
8.6
Gate-Source Charge2
Qgs VDS= -15V,VGS= -4.5V,ID= -3.3A
1.1
Gate-Drain Charge2
Qgd
2.6
Turn-On Delay Time2
td(on)
19
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -15V, VGS= -4.5V
ID @ -3.3A, RG = 6Ω
30
55
Fall Time2
tf
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -3.3A, VGS = 0V
-0.8
-1.1
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = -3.3A, dIF/dt = 100A / mS
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
8.5 nS
2.5 nC
REV 1.0
2 2015/5/19





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