P-Channel MOSFET. PM569BA Datasheet

PM569BA MOSFET. Datasheet pdf. Equivalent

Part PM569BA
Description P-Channel MOSFET
Feature PM569BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 70mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
Download PM569BA Datasheet

PM569BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PM569BA Datasheet
Recommendation Recommendation Datasheet PM569BA Datasheet





PM569BA
PM569BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
70mΩ @VGS = -10V
ID
-2.5A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-2.5
-2
-8
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
0.7
0.4
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.
MAXIMUM UNITS
173 °C / W
REV 1.0
1 2016/6/13



PM569BA
PM569BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 55 °C
VGS = -10V, ID = -2.5A
VGS = -4.5V, ID = -2.5A
VDS = -5V, ID = -2.5A
-40
-1.3 -1.95 -2.3
±100
-1
-10
56 70
75 105
10
V
nA
mA
S
DYNAMIC
Input Capacitance
Ciss
613
Output Capacitance
Coss VGS = 0V, VDS = -20V, f = 1MHz
69
Reverse Transfer Capacitance
Crss
53
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
VDS= -20V,VGS= -10V,ID= -2.5A
12.4
6.7
1.7
Gate-Drain Charge2
Qgd
3.1
Turn-On Delay Time2
td(on)
13
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -20V, VGS= -10V
ID @ -2.5A, RG = 6Ω
21
70
Fall Time2
tf
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -2.5A, VGS = 0V
-0.7
-1
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = -2.5A, dIF/dt = 100A / mS
Qrr
13 nS
7 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2016/6/13





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