P-Channel MOSFET. PZ5203EMA Datasheet

PZ5203EMA MOSFET. Datasheet pdf. Equivalent

Part PZ5203EMA
Description P-Channel MOSFET
Feature PZ5203EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -.
Manufacture UNIKC
Datasheet
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PZ5203EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PZ5203EMA Datasheet
Recommendation Recommendation Datasheet PZ5203EMA Datasheet





PZ5203EMA
PZ5203EMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID
-3A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±16
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3
2.5
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.8
0.5
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
162
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper,in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
UNITS
°C / W
REV 1.0
1 2015/7/30



PZ5203EMA
PZ5203EMA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -3A
VDS = -5V, ID = -3A
-30
-1.3 -1.8 -2.3
±30
-1
-10
44 51
69 85
9
V
mA
mA
S
DYNAMIC
Input Capacitance
Ciss
574
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
98
Reverse Transfer Capacitance
Crss
82
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS= -15V,VGS= -10V,
ID= -3A
13
2.1
3.3
Turn-On Delay Time2
td(on)
18
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V, VGS= -10V
ID @ -3A, RGS = 6Ω
31
33
Fall Time2
tf
22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -3A, VGS = 0V
-0.7
-1.1
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = -3A, dIF/dt = 100A / mS
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
13.5 nS
5 uC
REV 1.0
2 2015/7/30





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