P-Channel MOSFET. P5102FM6 Datasheet

P5102FM6 MOSFET. Datasheet pdf. Equivalent

Part P5102FM6
Description P-Channel MOSFET
Feature P5102FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 51mΩ @VGS = -4.
Manufacture UNIKC
Datasheet
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P5102FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P5102FM6 Datasheet
Recommendation Recommendation Datasheet P5102FM6 Datasheet





P5102FM6
P5102FM6
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
51mΩ @VGS = -4.5V
ID
-4.2A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-4.2
-3.3
-21
Avalanche Current
IAS -21
Avalanche Energy
L=0.1mH
EAS
22
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.4
0.9
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
85 °C / W
Ver 1.0
1 2012/6/25



P5102FM6
P5102FM6
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
Drain-Source On-State
Resistance1
RDS(ON)
Forward Transconductance1
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±8V
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 70 °C
VDS = -5V, VGS = -4.5V
VGS = -1.8V, ID = -2A
VGS = -2.5V, ID = -4A
VGS = -4.5V, ID = -4A
VDS = -5V, ID = -4A
-20
-0.45 -0.6 -0.9
±100
-1
-10
-21
60 71
48 61
40 51
17
DYNAMIC
Input Capacitance
Ciss
1200
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
187
Reverse Transfer Capacitance
Crss
119
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
8.2
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -4.5V,
ID = -4A
16.7
1.8
5.2
Turn-On Delay Time2
td(on)
20
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -10V
ID @ -4A, VGS = -4.5V, RGEN = 3.3Ω
36
46
Fall Time2
tf
62
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = -4A, dlF/dt = 100A / mS
30
14
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-1
-1.3
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/6/25





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