P-Channel MOSFET. P6503FM6 Datasheet

P6503FM6 MOSFET. Datasheet pdf. Equivalent

Part P6503FM6
Description P-Channel MOSFET
Feature P6503FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.
Manufacture UNIKC
Datasheet
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P6503FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P6503FM6 Datasheet
Recommendation Recommendation Datasheet P6503FM6 Datasheet





P6503FM6
P6503FM6
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
65mΩ @VGS = -4.5V
ID
-3.6A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.6
-3
-19
Avalanche Current
IAS -19
Avalanche Energy
L=0.1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1
0.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1pusle width Limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
130 °C / W
Ver 1.0
1 2012/6/25



P6503FM6
P6503FM6
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
Drain-Source On-State
Resistance1
RDS(ON)
Forward Transconductance1
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±12V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
VDS = -5V, VGS = -10V
VGS = -2.5V, ID = -1A
VGS = -4.5V, ID = -3.3A
VGS = -10V, ID = -3.6A
VDS = -5V, ID = -3.3A
-30
-0.45
-19
-0.97
72
51
43
14
-1.2
±100
-1
-10
80
65
50
DYNAMIC
Input Capacitance
Ciss
998
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
115
Reverse Transfer Capacitance
Crss
81
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
12.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -4.5V,
ID = -3.3A
10.8
2.1
3.8
Turn-On Delay Time2
td(on)
40
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V
ID @ -3.3A, VGS = -4.5V, RGS = 6Ω
110
25
Fall Time2
tf
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 ° C )
Continuous Current
IS
Forward Voltage1
VSD IF = -2.3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Change
trr
Qrr
IF = -2.3A, dlF/dt = 100A / mS
13.8
5
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-0.9
-1.1
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/6/25





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