P-Channel MOSFET. PZC502FYB Datasheet

PZC502FYB MOSFET. Datasheet pdf. Equivalent

Part PZC502FYB
Description P-Channel MOSFET
Feature PZC502FYB P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 550mΩ @VGS = .
Manufacture UNIKC
Datasheet
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PZC502FYB P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PZC502FYB Datasheet
Recommendation Recommendation Datasheet PZC502FYB Datasheet





PZC502FYB
PZC502FYB
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
550mΩ @VGS = -4.5V
ID
-0.7A
SOT-523
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-0.7
-0.6
-3
Power Dissipation
TA = 25 °C
TA= 70 °C
PD
0.4
0.3
ESD Class
HBM
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
W
KV
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
RqJA
280
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measureed with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
°C / W
Ver 1.0
1 2013-8-30



PZC502FYB
PZC502FYB
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±8V
-20
-0.4 -0.55 -1.2
±30
Zero Gate Voltage Drain Current
IDSS
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 55 °C
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -1.8V, ID = -0.35A
VGS = -2.5V, ID = -0.5A
VGS = -4.5V, ID = -0.6A
VDS = -5V, ID = -0.6A
765 1000
602 750
463 550
2
DYNAMIC
Input Capacitance
Ciss
42
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
16
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -10V, VGS = -4.5V
ID = -0.6A
VDS = -10V, ID @ -0.6A
VGS=-4.5V,RGS=6Ω
6
2
0.2
1
10
10
37
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -0.15A, VGS = 0V
-0.7
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr VDS=-10V
Qrr IF = -0.6A , dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
10
3
2Independent of operating temperature.
UNITS
V
mA
mA
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2013-8-30





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