P5103EAG

P5103EAG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -10V ID -5A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage Drain-Gate Voltage (RGS=20KΩ） VGS ±20 VDG -30 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -5 -4.2 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 2.0 1.4 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient t≦5sec Junction-to-Ambient Steady State Junction-to-Lead Steady State 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJA RqJL TYPICAL MAXIMUM 62.5 110 50 UNITS °C / W Ver 1.0 1 2012/9/26 P5103EAG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST COND...