P-Channel MOSFET. P5103EAG Datasheet

P5103EAG MOSFET. Datasheet pdf. Equivalent

Part P5103EAG
Description P-Channel MOSFET
Feature P5103EAG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
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P5103EAG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P5103EAG Datasheet
Recommendation Recommendation Datasheet P5103EAG Datasheet





P5103EAG
P5103EAG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID
-5A
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
Drain-Gate Voltage (RGS=20KΩ
VGS ±20
VDG -30
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-5
-4.2
-20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.0
1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
t5sec
Junction-to-Ambient
Steady State
Junction-to-Lead
Steady State
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJA
RqJL
TYPICAL
MAXIMUM
62.5
110
50
UNITS
°C / W
Ver 1.0
1 2012/9/26



P5103EAG
P5103EAG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-30
-1.00
-1.80
-3.00
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-20
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -4A
VGS = -10V, ID = -5A
VDS = -10V, ID = -5A
66 85
42 51
10
DYNAMIC
Input Capacitance
Ciss
700
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
120
Reverse Transfer Capacitance
Crss
75
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -5A
12.5
2.1
3.5
Turn-On Delay Time2
td(on)
7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V
ID @ -1A, VGEN = -10V, RGS = 6Ω
10
30
Fall Time2
tf
22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TC = 25 ° C )
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = -1A, VGS = 0V
-3
-6
-1
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
13.4
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nC
Ver 1.0
2 2012/9/26





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