P-Channel MOSFET. P1203EV Datasheet

P1203EV MOSFET. Datasheet pdf. Equivalent

Part P1203EV
Description P-Channel MOSFET
Feature P1203EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12m.
Manufacture UNIKC
Datasheet
Download P1203EV Datasheet

P1203EV P-Channel Logic Level Enhancement Mode MOSFET PRODU P1203EV Datasheet
P1203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1203EVG Datasheet
Recommendation Recommendation Datasheet P1203EV Datasheet





P1203EV
P1203EV
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-10A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-10
-8.3
-90
Avalanche Current
IAS -46
Avalanche Energy
L = 0.1mH
EAS
105
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C
UNITS
°C / W
REV 1.0
1 2014/9/16



P1203EV
P1203EV
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
-30
-1 -1.7 -3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -9A
VGS = -10V, ID = -10A
VGS = -20V, ID = -10A
VDS = -10V, ID = -10A
14 21
9 12
7.5 10
36
DYNAMIC
Input Capacitance
Ciss
2980
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
394
Reverse Transfer Capacitance
Crss
391
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -10A
VDS = -15V,
ID@ -1A, VGS = -10V, RGS = 6Ω
2.1
64
9
17
10
16
200
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -10A, VGS = 0V
-10
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
22
9
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/9/16





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