P1203EV

P1203EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -10 -8.3 -90 Avalanche Current IAS -46 Avalanche Energy L = 0.1mH EAS 105 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 1Pulse width limited by maximum junction temperature. 2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C UNITS °C / W REV 1.0 1 2014/9/16 P1203EV P-Channel Logic Level Enhancement Mode MOSFET EL...