P-Channel MOSFET. P2003EVG Datasheet

P2003EVG MOSFET. Datasheet pdf. Equivalent

Part P2003EVG
Description P-Channel MOSFET
Feature P2003EVG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20.
Manufacture UNIKC
Datasheet
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P2003EVG
P2003EVG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-9A
SOP- 08
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-9
-7
-50
Avalanche Current
IAS -27
Avalanche Energy
L = 0.1mH
EAS
36
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.1
1 2015/3/30



P2003EVG
P2003EVG
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
-30
-1 -1.5
-3
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
50
-1
mA
-10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -9A
VDS = -10V, ID = -9A
25 35
15 20
24 S
DYNAMIC
Input Capacitance
Ciss
1610
Output Capacitance
Coss
VGS = 0V, VDS = -15V, f = 1MHz
410 pF
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,
ID = -9A, VGS = -10V
VDS = -15V, ID @ -1A,
VGS = -10V,RL = 1Ω,RGS = 6Ω
200
3.7 Ω
31.4
4.5 nC
8.2
5.7
10
nS
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
-2.1 A
-1.2 V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF= 2A, dI/dt=100A/ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
16 nS
7 nC
2Independent of operating temperature.
REV 1.1
2 2015/3/30





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