P-Channel MOSFET. P2004EV Datasheet

P2004EV MOSFET. Datasheet pdf. Equivalent

Part P2004EV
Description P-Channel MOSFET
Feature P2004EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 20mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
Download P2004EV Datasheet

P2004EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2004EV Datasheet
Recommendation Recommendation Datasheet P2004EV Datasheet





P2004EV
P2004EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
20mΩ @VGS = -10V
ID
-8.7A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-8.7
-7
-45
Avalanche Current
Avalanche Energy2
L = 0.1mH
IAS
EAS
-45
103
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2VDD = -20V. Starting TJ = 25° C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
Ver 1.0
1 2012/4/13



P2004EV
P2004EV
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 55 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -8A
VDS = -5V, ID = -8A
-40
-1.5 -1.9 -3.0
±100
-1
-10
-45
23 32
15 20
30
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -30V, f = 1MHz
2670
392
Reverse Transfer Capacitance
Crss
280
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.65
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS,
ID = -8A, VGS = -10V
Qgd
50
10
13
Turn-On Delay Time2
td(on)
10
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -30V, RL = 1Ω,
ID @ -8A, VGS = -10V, RGEN= 6Ω
20
55
Fall Time2
tf
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Body-Diode Current3
ISM
Forward Voltage1
VSD IF = -8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -8A, dlF/dt = 100A / mS
26
17
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
-1.9
-45
-1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)