DatasheetsPDF.com

P2103NVG Dataheets PDF



Part Number P2103NVG
Manufacturers UNIKC
Logo UNIKC
Description N&P-Channel MOSFET
Datasheet P2103NVG DatasheetP2103NVG Datasheet (PDF)

P2103NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChannel 30 21mΩ @VGS = 10V -30 34mΩ @VGS = 10V ID 8A -6A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage SYMBOL VDS N- PChannel Channe 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA = 25 °C TA = 70 °C ID 8 -6 6 -5 Pulsed Drain Current1 IDM 36 -27 Avalanche Current IAS 26 -27 Avalanche Energy L =0..

  P2103NVG   P2103NVG


Document
P2103NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChannel 30 21mΩ @VGS = 10V -30 34mΩ @VGS = 10V ID 8A -6A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage SYMBOL VDS N- PChannel Channe 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA = 25 °C TA = 70 °C ID 8 -6 6 -5 Pulsed Drain Current1 IDM 36 -27 Avalanche Current IAS 26 -27 Avalanche Energy L =0.1mH EAS 35 38 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 62.5 °C / W REV 1.0 1 2014-1-17 P2103NVG N- & P- Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDIT.


P2004EV P2103NVG P2402OV


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)