NP-Channel MOSFET. P2103NVG Datasheet

P2103NVG MOSFET. Datasheet pdf. Equivalent

Part P2103NVG
Description N&P-Channel MOSFET
Feature P2103NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChan.
Manufacture UNIKC
Datasheet
Download P2103NVG Datasheet

NIKO-SEM N- & P-Channel Enhancement Mode P2103NVG Field E P2103NVG Datasheet
P2103NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SU P2103NVG Datasheet
Recommendation Recommendation Datasheet P2103NVG Datasheet





P2103NVG
P2103NVG
N- & P- Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
N-
Channel
P-
Channel
30 21mΩ @VGS = 10V
-30 34mΩ @VGS = 10V
ID
8A
-6A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
VDS
N- P-
Channel Channe
30 -30
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
8 -6
6 -5
Pulsed Drain Current1
IDM 36 -27
Avalanche Current
IAS 26 -27
Avalanche Energy
L =0.1mH
EAS
35 38
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
62.5 °C / W
REV 1.0
1 2014-1-17



P2103NVG
P2103NVG
N- & P- Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP
STATIC
Drain-Source
Breakdown
Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
N-Ch
P-Ch
30
-30
Gate Threshold
Voltage
Gate-Body
Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current1
Drain-Source On-
State Resistance1
Forward
Transconductance
1
Input Capacitance
Output
Capacitance
Reverse Transfer
Capacitance
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
Ciss
Coss
Crss
VDS = VGS, ID = 250mA
N-Ch
VDS = VGS, ID = -250mA
P-Ch
VDS = 0V, VGS = ±20V
N-Ch
VDS = 0V, VGS = ±20V
P-Ch
VDS = 24V, VGS = 0V
N-Ch
VDS = -24V, VGS = 0V
P-Ch
VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch
VDS =- 20V, VGS = 0V, TJ = 55 °C P-Ch
VDS = 5V, VGS = 10V
N-Ch
VDS =-5V, VGS = -10V
P-Ch
VGS = 4.5V, ID = 6A
N-Ch
VGS = -4.5V, ID = -5A
P-Ch
VGS = 10V, ID = 7A
N-Ch
VGS = -10V, ID = -6A
P-Ch
VDS = 10V, ID = 5A
VDS = -10V, ID = -5A
DYNAMIC
N-Ch
P-Ch
N-Channel
VGS = 0V, VDS = 10V, f = 1MHz
P-Channel
VGS = 0V, VDS = -10V, f = 1MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1
-1
36
-27
1.7
-1.6
19
40
14
28
14
8
659
983
218
216
138
157
UNITS
MAX
V
2.5
-2.5
±100
±100
1
-1
10
-10
nA
mA
A
31
56
21
34
S
pF
REV 1.0
2 2014-1-17





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