N&P-Channel MOSFET
P2503NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 25mΩ @VGS =10V
-30V
45mΩ @VGS = -...
Description
P2503NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 25mΩ @VGS =10V
-30V
45mΩ @VGS = -10V
ID Channel 7A N -5A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current2
TA = 25 °C TA = 70°C
N7 P -5 ID N 5 P -4
Pulsed Drain Current1
N 30 IDM P -30
Avalanche Current
N 20 IAS P -20
Avalanche Energy
L = 0.1mH
N 20 EAS P 20
Power Dissipation
TA = 25 °C TA = 70 °C
N2 P 1.7 PD N 1.3 P1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.0
1 2014/9/19
P2503NVG
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Device
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
RqJA
N-ch P-ch
63 °C / W
70
1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3The valu...
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