NP-Channel MOSFET. P2503NVG Datasheet

P2503NVG MOSFET. Datasheet pdf. Equivalent

Part P2503NVG
Description N&P-Channel MOSFET
Feature P2503NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 25mΩ @VGS =10V .
Manufacture UNIKC
Datasheet
Download P2503NVG Datasheet

P2503NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMAR P2503NVG Datasheet
NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Trans P2503NVG Datasheet
Recommendation Recommendation Datasheet P2503NVG Datasheet





P2503NVG
P2503NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
25mΩ @VGS =10V
-30V
45mΩ @VGS = -10V
ID Channel
7A N
-5A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30
VDS P -30
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current2
TA = 25 °C
TA = 70°C
N7
P -5
ID N 5
P -4
Pulsed Drain Current1
N 30
IDM P -30
Avalanche Current
N 20
IAS P -20
Avalanche Energy
L = 0.1mH
N 20
EAS P 20
Power Dissipation
TA = 25 °C
TA = 70 °C
N2
P 1.7
PD N 1.3
P1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/9/19



P2503NVG
P2503NVG
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Device
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
RqJA
N-ch
P-ch
63
°C / W
70
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
N 30
P -30
V
N 1 1.5 2.5
P -1 -1.5 -2.5
N ±100
nA
P ±100
Zero Gate Voltage Drain
Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
ID(ON)
RDS(ON)
gfs
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 55 °C
VDS = -20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
VGS = 4.5V, ID = 6A
VGS = -4.5V, ID = -4A
VGS = 10V, ID = 7A
VGS = -10V, ID = -5A
VDS = 5V, ID = 7A
VDS = -5V, ID = -5A
N
P
N
P
N
P
N
P
N
P
N
P
1
-1
mA
10
-10
30
A
-30
25 37
58 80
18 25
34 45
19
S
11
REV 1.0
2 2014/9/19





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)