P-Channel MOSFET. P261ALV Datasheet

P261ALV MOSFET. Datasheet pdf. Equivalent

Part P261ALV
Description Dual P-Channel MOSFET
Feature P261ALV Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -12V 19mΩ @VGS .
Manufacture UNIKC
Datasheet
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P261ALV Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMM P261ALV Datasheet
Recommendation Recommendation Datasheet P261ALV Datasheet





P261ALV
P261ALV
Dual P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-12V
19mΩ @VGS = -4.5V
ID
-8.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -12
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA= 25 °C
TA= 70 °C
ID
IDM
-8.5
-6.8
-34
Avalanche Current
IAS -35
Avalanche Energy
L = 0.1mH
EAS
61
Power Dissipation
TA= 25 °C
TA= 70°C
PD
2
1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
1Pulse width limited by maximum junction temperature.
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014-5-9



P261ALV
P261ALV
Dual P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID =- 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±8V
VDS = -9.6V, VGS = 0V
VDS =-9V, VGS = 0V, TJ = 55°C
-12
-0.35 -0.6 -0.85
±100
-1
-10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -2.5V, ID = -8A
VGS =-4.5V, ID = -8.3A
17 24
14 19
Forward Transconductance1
gfs
VDS =-5V, ID =-8.3A
49 S
DYNAMIC
Input Capacitance
Ciss
2618
Output Capacitance
Coss VGS = 0V, VDS = -6V, f = 1MHz
686
Reverse Transfer Capacitance
Crss
617
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = -6V , VGS = -4.5V,
ID = -8.3A
Qgd
33
3.8
10.6
Turn-On Delay Time2
td(on)
35
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -6V
ID @ -8.3A, VGS = -4.5V, RGEN = 6Ω
69
188
Fall Time2
tf
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -8.3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -8.3A, dl/dt = 100A / μS
50
36
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-2
-1
pF
Ω
nC
nS
A
V
nS
mC
REV 1.0
2 2014-5-9





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