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P2803NVG Dataheets PDF



Part Number P2803NVG
Manufacturers UNIKC
Logo UNIKC
Description N&P-Channel MOSFET
Datasheet P2803NVG DatasheetP2803NVG Datasheet (PDF)

P2803NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 10V -30V 34mΩ @VGS = -10V ID Channel 7A N -6A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TC = 25 °C TC = 70 °C N7 P -6 ID N 6 P -5 Pulsed Drain Current1 N 20 IDM P -20 Power Dissipation TC = 25 °C TC = 70 °C N2 .

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P2803NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 10V -30V 34mΩ @VGS = -10V ID Channel 7A N -6A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TC = 25 °C TC = 70 °C N7 P -6 ID N 6 P -5 Pulsed Drain Current1 N 20 IDM P -20 Power Dissipation TC = 25 °C TC = 70 °C N2 P2 PD N 1.3 P 1.3 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle ≦ 1% SYMBOL RqJA TYPICAL MAXIMUM UNITS 62.5 °C / W Rev 1.1 1 2015/5/22 P2803NVG N&P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(B.


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