P4404QV

P4404QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28mΩ @VGS =10V -40V 44mΩ @VGS = -10V ID Channel 7A N -5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 40 VDS P -40 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N7 P -5 ID N 6 P -4 Pulsed Drain Current1 N 25 IDM P -20 Avalanche Energy L = 0.1mH N 28 EAS P 31 Power Dissipation TA = 25 °C TA = 70 °C N 2 P PD N 1.3 P Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C REV 1.0 1 2014/10/24 P4404QV N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJL RqJA TYPICAL MAXIMUM UNITS 31 °C / W 62.5 ELECTRICAL CHARACTERISTICS (TC = 25 °C...