N-Channel MOSFET. PZP103BYB Datasheet

PZP103BYB MOSFET. Datasheet pdf. Equivalent

Part PZP103BYB
Description N-Channel MOSFET
Feature PZP103BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3Ω @VGS = 4V I.
Manufacture UNIKC
Datasheet
Download PZP103BYB Datasheet

PZP103BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PZP103BYB Datasheet
Recommendation Recommendation Datasheet PZP103BYB Datasheet





PZP103BYB
PZP103BYB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3Ω @VGS = 4V
ID
0.3A
SOT-523
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
0.3
0.2
3
Avalanche Current
IAS 1.2
Avalanche Energy
L = 1mH EAS 0.8
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.5
0.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
220 °C / W
Ver 1.0
1 2012/5/18



PZP103BYB
PZP103BYB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 100mA
30
VDS = VGS, ID = 100mA
0.9 1.3 1.5
VDS = 0V, VGS = ±16V
±30
VDS = 24V, VGS = 0V
1
VDS = 20V, VGS = 0V , TJ = 70 °C
10
VGS = 4V, ID = 0.1A
13
VGS = 2.5V, ID = 0.01A
26
VDS = 5V, ID = 0.1A
1
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
CissVDS=15V)
Ciss(VDS=5V)
Coss
Crss
Rg
td(on)
tr
td(off)
tf
VGS = 0V, f = 1MHz
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDD = 15V,
ID @ 0.1A, VGS = 4V, RGEN = 6Ω
35
37
9
5
518
21
45
86
88
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 0.1A, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
0.3
1.3
UNIT
V
mA
mA
Ω
S
pF
Ω
nS
A
V
Ver 1.0
2 2012/5/18





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)