N-Channel MOSFET. PZP003BYB Datasheet

PZP003BYB MOSFET. Datasheet pdf. Equivalent

Part PZP003BYB
Description N-Channel MOSFET
Feature PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6Ω @VGS = 4V I.
Manufacture UNIKC
Datasheet
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PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PZP003BYB Datasheet
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PZP003BYB
PZP003BYB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6Ω @VGS = 4V
ID
110mA
SOT-523
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TA = 25 °C
TA = 100 °C
ID
IDM
110
70
400
Avalanche Current
IAS 300
Avalanche Energy
L = 0.1mH
EAS
0.5
Power Dissipation
TA = 25 °C
TA = 100 °C
PD
150
60
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
mA
mJ
mW
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
833 °C / W
Ver 1.0
1 2012/4/12



PZP003BYB
PZP003BYB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 100mA
30
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 100mA
0.9 1.3 1.8
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±16V
±30
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4V, ID = 100mA
VGS = 2.5V, ID = 10mA
6
13
Forward Transconductance1
gfs
VDS = 5V, ID = 0.1A
0.3
DYNAMIC
Input Capacitance
Ciss
40
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
11
Reverse Transfer Capacitance
Crss
6
Turn-On Delay Time2
td(on)
21
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V,
ID @ 100mA, VGS = 4V, RGEN = 6Ω
45
86
Fall Time2
tf
88
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 0.5A, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
110
1.3
UNIT
V
mA
mA
Ω
S
pF
nS
mA
V
Ver 1.0
2 2012/4/12





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