N-Channel MOSFET. PZD502CYB Datasheet

PZD502CYB MOSFET. Datasheet pdf. Equivalent

Part PZD502CYB
Description N-Channel MOSFET
Feature PZD502CYB N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 450.
Manufacture UNIKC
Datasheet
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PZD502CYB
PZD502CYB
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 450mΩ @VGS = 4.5V
ID
0.7A
SOT-523
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
0.7
0.6
2
Power Dissipation
TA = 25 °C
TA= 70 °C
PD
0.4
0.2
ESD Class
HBM
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
W
KV
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
280
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measureed with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
UNITS
°C / W
REV 1.0
1 2014/8/25



PZD502CYB
PZD502CYB
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
20
0.35 0.6 1
±30
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 55 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 1.8V, ID = 0.35A
VGS = 2.5V, ID = 0.5A
VGS = 4.5V, ID = 0.6A
VDS = 5V, ID = 0.6A
426 850
299 765
245 450
2
DYNAMIC
Input Capacitance
Ciss
38
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
16
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10V, VGS = 4.5V
ID = 0.6A
VDS = 6V, ID @ 0.6A
VGS= 4.5V,RGS= 6Ω
12
1.4
0.4
0.8
6
18
30
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 0.15A, VGS = 0V
0.7
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr VDS= 12V
Qrr IF = 2A , dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
233
630
2Independent of operating temperature.
UNITS
V
mA
mA
S
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014/8/25





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