N-Channel MOSFET. P2202CM6 Datasheet

P2202CM6 MOSFET. Datasheet pdf. Equivalent

Part P2202CM6
Description N-Channel MOSFET
Feature P2202CM6 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 22mΩ @VGS = 4.5V.
Manufacture UNIKC
Datasheet
Download P2202CM6 Datasheet

P2202CM6 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2202CM6 Datasheet
Recommendation Recommendation Datasheet P2202CM6 Datasheet





P2202CM6
P2202CM6
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22mΩ @VGS = 4.5V
ID
5.6A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
5.6
4.5
50
Avalanche Current
IAS 21
Avalanche Energy
L=0.1mH
EAS
22
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.1
0.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
110 °C / W
Ver 1.0
1 2012/6/25



P2202CM6
P2202CM6
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
Drain-Source On-State
Resistance1
RDS(ON)
Forward Transconductance1
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 70 °C
VDS = 10V, VGS = 4.5V
VGS = 1.8V, ID = 4A
VGS = 2.5V, ID = 5A
VGS = 4.5V, ID = 6A
VDS = 5V, ID = 6A
20
0.5 0.7 1
±100
1
10
50
29 34
21 26
18 22
33
DYNAMIC
Input Capacitance
Ciss
963
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
127
Reverse Transfer Capacitance
Crss
121
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 4.5V,
ID = 6A
Qgd
13.5
4
1.8
Turn-On Delay Time2
td(on)
30
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 10V
ID @ 6A, VGS = 4.5V, RG = 6Ω
120
70
Fall Time2
tf
70
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dIF/dt=100A/mS
12.4
3.3
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
5.6
1
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/6/25





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