N-Channel MOSFET. PA606HAG Datasheet

PA606HAG MOSFET. Datasheet pdf. Equivalent

Part PA606HAG
Description N-Channel MOSFET
Feature PA606HAG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 55V 160mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
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PA606HAG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PA606HAG Datasheet
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PA606HAG
PA606HAG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
55V 160mΩ @VGS = 10V
ID
1.8A
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 55
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
1.8
1.4
11
Avalanche Current
IAS 11
Avalanche Energy
L = 0.1mH
EAS
6
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.9
0.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
140 °C / W
Ver 1.0
1 2012/4/12



PA606HAG
PA606HAG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 1.5A
VGS = 10V, ID = 1.8A
VDS = 5V, ID = 1.8A
55
1.0 1.5 2.5
±100
1
10
11
158 210
135 160
6
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
243
18
Reverse Transfer Capacitance
Crss
14
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 1.8A
Qgd
6.4
0.8
2.5
Turn-On Delay Time2
td(on)
6
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 30V
ID @ 1.5A, VGS = 10V, RG = 1Ω
15
15
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 1.8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 1.8A, dlF/dt = 100A / mS
18.3
13
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.8
1.2
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/12





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