N-Channel MOSFET
P0303BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3mΩ @VGS = 10V
ID 20A
SOP- 08
ABSO...
Description
P0303BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3mΩ @VGS = 10V
ID 20A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
20 16 80
Avalanche Current
IAS 74
Avalanche Energy
L = 0.1mH
EAS
278
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.1 1.4
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL MAXIMUM UNITS 57 °C / W
Ver 1.0
1 2013-3-11
P0303BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (Tj = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage...
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