P0903BVA

P0903BVA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 13A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TA = 25 °C TA = 70 °C ID IDM IAS 13 10 80 30 Avalanche Energy L =0.1mH EAS 45 Power Dissipation TA= 25 °C TA =70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.3 1.5 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 55 Junction-to-Case RqJC 3.7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.The value in any given application depends on the user's specific board design UNITS °C / W REV 1.0 1 2014/9/1...