P1103BVG

P1103BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 11mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 11 10 100 Avalanche Current IAS 11 Avalanche Energy L = 0.1mH EAS 6 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 2.0 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle  1%. SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W Ver 1.0 1 2012/4/13 P1103BVG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Ga...