N-Channel MOSFET. P1210BVA Datasheet

P1210BVA MOSFET. Datasheet pdf. Equivalent

Part P1210BVA
Description N-Channel MOSFET
Feature P1210BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 12mΩ @VGS = 10.
Manufacture UNIKC
Datasheet
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P1210BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1210BVA Datasheet
Recommendation Recommendation Datasheet P1210BVA Datasheet





P1210BVA
P1210BVA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
12mΩ @VGS = 10V
ID
8.7A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
8.7
6.9
32
Avalanche Current
IAS 15
Avalanche Energy
L = 1mH EAS 112
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2
1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
62
Junction-to-Case
RqJC
25
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2016/12/27



P1210BVA
P1210BVA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.4
1.8 2.4
±100
0.1
1
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 8A
VGS = 10V, ID = 8A
11.4 15
9.7 12
Forward Transconductance1
gfs
VDS = 5V, ID = 8A
25 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 50V, f = 1MHz
2108
205
10
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 50V , VGS = 10V,
ID = 8A
Qgd
37
6.1
7.4
Turn-On Delay Time2
td(on)
7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 8A, VGS = 10V, RGEN = 6Ω
3
23
Fall Time2
tf
4
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 8A, dl/dt = 100A /mS
55
70
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.6
1.2
nC
nS
A
V
nS
nC
REV 1.0
2 2016/12/27





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