N-Channel MOSFET. P1503BVG Datasheet

P1503BVG MOSFET. Datasheet pdf. Equivalent

Part P1503BVG
Description N-Channel MOSFET
Feature P1503BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 15mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P1503BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1503BVG Datasheet
Recommendation Recommendation Datasheet P1503BVG Datasheet





P1503BVG
P1503BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 15mΩ @VGS = 10V
ID
10A
SOP- 08
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
10
8
A
40
Avalanche Current
IAS 10
Avalanche Energy
L = 0.1mH
EAS
5 mJ
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
W
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJL
RqJA
TYPICAL
MAXIMUM
20
50
UNITS
°C / W
Ver 1.0
1 2012/4/13



P1503BVG
P1503BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 10A
VDS = 5V, ID = 10A
30
1.0 1.5 3.0
±100
1
10
70
17.5 24.0
12.5 15.0
18
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
699
229
Reverse Transfer Capacitance
Crss
143
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 0.5V(BR)DSS, ID = 10A
18.4
9.1
2.6
Gate-Drain Charge2
Qgd
4.8
Turn-On Delay Time2
td(on)
5.5
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 1A, VGS = 10V, RGEN = 3Ω
6.5
20
Fall Time2
tf
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
trr IF = 4.5A, dlF/dt = 100A / mS
20
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4.5
9
1.1
25
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
Ver 1.0
2 2012/4/13





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