P1503BVG

P1503BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 15mΩ @VGS = 10V ID 10A SOP- 08 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10 8 A 40 Avalanche Current IAS 10 Avalanche Energy L = 0.1mH EAS 5 mJ Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 W 1.6 Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% SYMBOL RqJL RqJA TYPICAL MAXIMUM 20 50 UNITS °C / W Ver 1.0 1 2012/4/13 P1503BVG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS...