N-Channel MOSFET. P2804HVG Datasheet

P2804HVG MOSFET. Datasheet pdf. Equivalent

Part P2804HVG
Description Dual N-Channel MOSFET
Feature P2804HVG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS =.
Manufacture UNIKC
Datasheet
Download P2804HVG Datasheet

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Trans P2804HVG Datasheet
P2804HVG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUM P2804HVG Datasheet
Recommendation Recommendation Datasheet P2804HVG Datasheet





P2804HVG
P2804HVG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 28mΩ @VGS = 10V
ID
7A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
7
6
40
Power Dissipation
TA = 25 °C
TA= 70°C
PD
2
1.28
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJL
RqJA
TYPICAL
MAXIMUM
31
62.5
UNITS
°C / W
REV 1.0 1 2014/9/4



P2804HVG
P2804HVG
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
40
V
123
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55 °C
1
mA
10
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V
20
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 7A
VGS = 5V, ID = 6A
21 28
27 42
Forward Transconductance1
gfs
VDS = 10V, ID = 5A
24 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 20V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 7A
VDS = 20V,
ID @ 1A, VGS = 10V, RGEN = 6Ω
742
103
94
17.4
4.1
4.4
2.2
7.5
11.8
11
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = Is, VGS = 0V
Reverse Recovery Time
trr IF = 5A, dlF/dt = 100A / μS
15.5
1.3
1
A
V
nS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
7.9 nC
REV 1.0 2 2014/9/4





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