P2803HVG

P2803HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 27.5mΩ @VGS = 10V ID 6.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TA = 25 °C TA = 70 °C ID IDM 6.5 5 30 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 20 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RqJA 63 °C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25° C. The value in any given application depends on t...