P2103HVG

P2103HVG Dual N--Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 21mΩ @VGS = 10V ID 8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 8 6 40 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS 26 35 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.28 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature. 2VDD = 15V. Starting TJ = 25°C. SYMBOL RqJA RqJL TYPICAL MAXIMUM 62.5 25 UNITS °C / W REV 1.1 1 2015/11/13 P2103HVG Dual N--Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP...