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P4506BV Dataheets PDF



Part Number P4506BV
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P4506BV DatasheetP4506BV Datasheet (PDF)

P4506BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 45mΩ @VGS = 10V ID 5.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TA = 25 °C TA = 70 °C ID IDM IAS 5.5 4.5 30 23 Avalanche Energy L = 0.1mH EAS 26 Power Dissipation TA= 25 °C TA =70 °C Operating Junction & Storage Temperature R.

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P4506BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 45mΩ @VGS = 10V ID 5.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TA = 25 °C TA = 70 °C ID IDM IAS 5.5 4.5 30 23 Avalanche Energy L = 0.1mH EAS 26 Power Dissipation TA= 25 °C TA =70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.5 1.6 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 50 UNITS °C / W REV 1.0 1 2014/12/2 P4506BV N-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Vol.


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