P-Channel MOSFET. P3304EV Datasheet

P3304EV MOSFET. Datasheet pdf. Equivalent

Part P3304EV
Description P-Channel MOSFET
Feature P3304EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 33mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
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P3304EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P3304EV Datasheet
Recommendation Recommendation Datasheet P3304EV Datasheet





P3304EV
P3304EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
33mΩ @VGS = -10V
ID
-7A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-7
-6
-30
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/4/13



P3304EV
P3304EV
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -5V, ID = -5A
VGS = -10V, ID = -7A
VDS = -10V, ID = -7A
-40
-1.0 -2.0 -3.0
±100
-1
-10
-30
40 60
25 33
18
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -10V, f = 1MHz
1000
450
Reverse Transfer Capacitance
Crss
108
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = -7A, VGS = -10V
20
3.2
2.7
Turn-On Delay Time2
td(on)
9.7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -20V,
ID @ -1A, VGS = -10V, RGS = 6Ω
14.0
28.7
Fall Time2
tf
17.8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = IS, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = IS, dlF/dt = 100A /mS
80
75
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
19.4
28.1
51.6
32.2
-1.3
-2.6
-1
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13





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